Selective release of InP heterostructures from InP substrates
نویسندگان
چکیده
منابع مشابه
Molecular Beam Epitaxy of InP-based Heterostructures on Silicon Substrates and Membranes
Generally, there are three hurdles for successful epitaxial growth of III-V materials on silicon: differences in lattice constants, thermal expansion coefficients, and lattice polarity (i.e. polar vs. non-polar). These differences yield a high density of threading dislocations and antiphase domains in the epitaxial films, which drastically reduce the efficiencies and lifetimes of devices made i...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
سال: 2016
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.4958799